The research team of the National Key Laboratory of Integrated Chips and Systems and the Institute of Cutting-edge Technology of Chips and Systems of Fudan University recently released a semiconductor charge storage technology.每秒可執行25億次操作，這是迄今為止全球最快的半導體電荷存儲技術。 This result has been published in the internationally renowned academic journal Nature.

“破曉” 每秒可執行25億次操作

The Fudan University research team named the memory "dawn", only 1 square centimeters in size, the appearance is no different from ordinary memory, however, it is through innovative physical mechanisms,Increase the memory erase speed to 400 picoseconds oncewipeOr write, a skinsecondIt's only a trillionth of a second。 The speed of "breaking dawn" is equivalent to 25 billion operations per second, which is a million times faster than traditional flash memory.

Liu Chunsen, researcher of the National Key Laboratory of Integrated Chips and Systems of Fudan University:This speed increase is very groundbreaking and completely breaks the theoretical bottleneck of the existing storage technology framework.

According to reports, the team of researchers put forward a new idea of speed-up, this innovation not only achieved a huge breakthrough in speed, but also this new type of memory in the case of power failure, data will not be lost.

After commercial application

It is expected to boost the development of artificial intelligence computing

The main person in charge of the scientific research team introduced,This new achievement is not far from being translated into commercial applicationsAt present, the team has cooperated with the manufacturer to carry out tape-out verification.In the future, this technology is expected to play a huge role in artificial intelligence computing。

According to experts, the computing of artificial intelligence large models mainly relies on GPU graphics card chips, and the current mainstream commercial GPU chips can achieve 5.0 trillion floating point operations per second, but the speed of writing or erasing the supporting memory is still at the microsecond level.

Fudan University's "Dawn" memory capability can just meet the needs of high-speed computing of GPU chips. In order to achieve the transformation of this breakthrough technology as soon as possible, the research team of Fudan University has in-depth cooperation with manufacturers in the process of research and development. It is understood that tape-out verification has been carried out and preliminary results have been obtained.

Liu Chunsen, researcher of the National Key Laboratory of Integrated Chips and Systems of Fudan University:At present, it is possible to realize small-scale, full-featured chips (tape-out). The next step is to start trying to integrate it into existing phones and computers, so that we will no longer encounter some bottlenecks caused by existing storage technologies such as lag and heating when deploying the local model.

（總台央視記者 梁錚錚 代欽夫 王殿甲）